- 您现在的位置：买卖IC网 > Sheet目录137 > NRVB130T1G (ON Semiconductor)DIODE SCHOTTKY 1A 30V SOD-123
    MBR130T1G, NRVB130T1G, MBR130T3G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 30 V Average Rectified Forward Current (Rated VR) TL = 65 ?C IF(AV) 1.0 A Non?Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 5.5 A Storage Temperature Range Tstg ?65 to +125 ?C Operating Junction Temperature TJ ?65 to +125 ?C Voltage Rate of Change (Rated VR) dv/dt 1000 V/s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Ambient (Note 1) R?JA 230 ?C/W Thermal Resistance, Junction to Lead (Note 1) R?JL 108 ?C/W 1. FR?4 or FR?5 = 3.5 ? 1.5 inches using a 1 inch Cu pad. ELECTRICAL CHARACTERISTICS Characteristic Symbol Typ Max Unit Instantaneous Forward Voltage (Note 2) (IF = 0.1 A, T J = 25 ?C) (IF = 0.7 A, T J = 25 ?C) (IF = 1.0 A, T J = 25 ?C) VF ? ? 0.47 0.35 0.45 ? V Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25 ?C) (VR = 5 V, T C = 25 ?C) IR 60 10 A 2. Pulse Test: Pulse Width = 300 s, Duty Cycle ? 2%. |